IXGN82N120B3H1

Overview

The IXGN82N120B3H1 is a high-speed, low Vsat Planar Trench (PT) IGBT from the GenX3 family, designed for switching frequencies between 3 and 20 kHz. It features a SOT-227B package with an integrated anti-parallel diode. Key electrical parameters include a collector-emitter voltage of 1200V, a continuous collector current of 145A at 25°C, and a maximum power dissipation of 595W. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• High-speed switching capability optimized for 3-20 kHz applications
• Low saturation voltage characteristics for improved efficiency
• Integrated anti-parallel diode in a single module configuration

Applications

• Induction heating systems
• Uninterruptible Power Supply (UPS)
• High-frequency power supplies

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Request original manufacturer datasheets and RoHS compliance certificates upon order confirmation. Ensure storage conditions align with semiconductor handling standards to prevent moisture sensitivity damage prior to soldering.

Selection Notes

Select this component for designs requiring high switching speeds combined with low conduction losses. The integrated diode simplifies circuit topology by eliminating external freewheeling components. Evaluate thermal management requirements carefully due to the 595W power dissipation rating and ensure gate drive voltages remain within specified limits.

Part Context

This part belongs to the IXYS GenX3 series, utilizing advanced planar trench technology. It represents a discrete power module solution rather than a standard transistor, offering robust performance in medium-to-high power industrial applications where compact packaging and high reliability are critical design constraints.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.