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The IXGP12N100 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 1 kV and a continuous collector current rating of 12 A at 25°C. The device utilizes the HiPerFAST process technology and is housed in a TO-220AB package with three leads. It supports a maximum junction temperature of 175°C and includes an integrated anti-parallel Fast Recovery Epitaxial Diode (FRED).
Verify the specific suffix code on the component marking against the official datasheet, as variations may indicate different thermal or electrical specifications. Confirm RoHS compliance status and lead-free certification requirements prior to procurement. Ensure the supplier provides valid traceability documentation for quality assurance purposes.
Select this component for designs requiring high-voltage switching with integrated freewheeling capabilities. The TO-220AB package facilitates easy mounting via a single screw. Consider the thermal resistance and heat sinking requirements based on the expected conduction and switching losses in the target application environment.
This part belongs to the IXYS HiPerFAST family of high-performance IGBTs. It is designed for medium-power applications where compact size and high reliability are critical. The integration of the FRED diode simplifies circuit topology by eliminating the need for external parallel diodes in many configurations.
Direct replacements include IXGA12N100U1 and IXGH32N50BU1 variants within the same manufacturer portfolio. Verify pinout compatibility and thermal interface dimensions before substitution. Cross-reference electrical parameters such as Vce(sat) and switching times to ensure performance parity.