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Product Detailed Parameters
- Description：IGBT PT 1200V 22A TO-220-3
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：22 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 12A
- Power - Max：100 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：20.4 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
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Overview
The IXGP12N120A3 is a GenX3 insulated gate bipolar transistor manufactured by IXYS. It features an N-channel configuration with a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 12A at 25°C. The device utilizes punch-through technology to achieve low saturation voltage, making it suitable for high-efficiency power switching applications. It is housed in a TO-220AB package with three pins, providing robust thermal performance and mechanical stability for industrial power electronics designs.
Feature Summary
- GenX3 technology optimized for hard switching up to 35 kHz
- Ultra-low saturation voltage for enhanced efficiency
- Punch-through design ensuring stable thermal characteristics
Applications
- High-frequency inverters
- Switching power supplies
- Motor control drives
Procurement Notes
Verify the manufacturer datasheet revision date and specific electrical test conditions when sourcing. Confirm that the component matches the exact GenX3 specification sheet provided by IXYS or Littelfuse. Ensure the package type and pinout correspond to the required PCB footprint before finalizing procurement orders.
Selection Notes
Select this component for circuits requiring efficient switching at frequencies up to 35 kHz. The low Vsat characteristic makes it ideal for applications where conduction losses are critical. Ensure the thermal management system can handle the power dissipation associated with the specified current ratings under worst-case operating temperatures.
Part Context
This part belongs to the IXYS GenX3 family of IGBTs, which are designed for improved switching performance compared to previous generations. The 'A3' suffix typically denotes specific manufacturing revisions or testing standards within the product line. It serves as a direct successor or variant to earlier models like the A2 series, offering refined electrical characteristics for modern power conversion systems.
Replacement Considerations
Direct substitutes include the IXGP12N120A2 and IXGP12N120A. Verify pin compatibility and thermal resistance values before substitution. Other similar devices from different manufacturers may require circuit adjustments due to differences in switching speed and saturation voltage profiles.
