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The IXGP15N100C is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the Lightspeed series, manufactured by Littelfuse. It features a collector-emitter breakdown voltage of 1000 V and a continuous collector current rating of 30 A at 25°C. The device utilizes a TO-268AA (D3PAK-3) surface-mount package with the case connected to the collector. Key electrical parameters include a maximum collector-emitter saturation voltage of 3.5 V and an operating junction temperature range up to 150°C.
Verify component authenticity through authorized Littelfuse distributors or certified suppliers. Confirm RoHS compliance status and check for specific ordering suffixes that may indicate tape-and-reel packaging variations. Request original manufacturer datasheets to validate technical specifications against current production standards before finalizing procurement orders.
Select this IGBT for applications requiring high voltage isolation and moderate current handling in compact designs. Ensure the gate drive circuit supports the required voltage levels and that the PCB layout accommodates the D3PAK-3 footprint. Evaluate thermal resistance requirements to maintain junction temperatures within the specified 150°C limit during operation.
This component belongs to the IXYS Lightspeed IGBT family, designed for high-efficiency power switching. It serves as a surface-mount alternative to traditional through-hole packages like TO-220, offering improved mounting density. The part integrates advanced trench gate technology to reduce conduction and switching losses compared to standard planar devices.
Direct pin-compatible replacements should be sought within the IXYS IXGT or IXGH series with matching 1000V ratings and similar current capabilities. Verify that substitute parts maintain compatible saturation voltages and thermal characteristics to ensure circuit performance consistency without redesigning the heat sink interface.