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The IXYS IXGP24N60C is a High-Gain IGBT belonging to the HiPerFAST series, designed for high-efficiency power switching applications. It features a 600V collector-emitter breakdown voltage and a continuous collector current of 56A at 25°C. The device utilizes a standard gate input with a maximum saturation voltage of 2.7V at 30A. Key electrical parameters include a gate charge of 95nC and switching energies of 180µJ (turn-on) and 200µJ (turn-off). It operates within a junction temperature range of -55°C to 150°C and is housed in an ISOPLUS247 through-hole package.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Request original datasheets and material compliance certificates to confirm specifications. Inspect packaging integrity upon receipt to ensure the device meets storage and handling standards required for sensitive semiconductor components.
Select this component when a 600V rating and 56A continuous current are required in an ISOPLUS247 package. Ensure the gate driver can supply sufficient current to manage the 95nC gate charge efficiently. Verify that the thermal management solution supports the 170W power dissipation limit under expected operating conditions.
This part belongs to the IXYS HiPerFAST family of insulated gate bipolar transistors. It shares the base numbering convention with other variants in the series but is distinguished by its specific gain characteristics and package configuration. The ISOPLUS247 package provides robust thermal performance for high-power discrete applications.
Direct substitutes may include other HiPerFAST series devices with matching voltage and current ratings. Verify pin compatibility and thermal resistance values before implementation. Cross-reference with IXGH or IXGR series parts if package variations are acceptable.