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The IXGP28N60A3M is a single N-channel Power MOSFET from the IXYS PolarHV series, housed in a TO-247AD-3 through-hole package. It features a drain-source breakdown voltage (Vds) of 600 V and a continuous drain current (Id) of 28 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 0.27 Ohms at a gate-source voltage of 10 V. Key switching parameters include a total gate charge (Qg) of 72 nC, with typical turn-on and turn-off delays of 25 ns and 75 ns, respectively. The component supports a power dissipation of 460 W and operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'M' against the manufacturer datasheet to confirm packaging or tape-and-reel specifications, as standard variants may differ. Ensure the source document explicitly lists this part number to avoid substitution errors with similar IXYS models. Cross-reference RoHS compliance status directly with the official product specification sheet prior to procurement.
Select this component when a 600 V rating and approximately 28 A continuous current are required in a TO-247 package. Compare Rds(on) and Qg values against alternative MOSFETs to ensure compatibility with existing gate driver capabilities. Verify thermal management requirements based on the 460 W power dissipation rating and thermal resistance data provided in the official datasheet.
This model belongs to the IXYS PolarHV family of high-voltage MOSFETs. It shares the 600 V voltage class and TO-247AD-3 package form factor with other devices in the series, such as the IXTH26N60P. The primary distinction lies in the specific current handling and on-resistance optimization tailored for efficient power switching in medium-power industrial applications.
Direct substitutes must match the 600 V Vds, ~28 A Id, and TO-247AD-3 package. Verify pinout compatibility and electrical parameters like Rds(on) and Qg. Check if alternative manufacturers offer equivalent performance metrics for seamless integration without circuit redesign.