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The IXGP2N100 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 1000V and a continuous collector current rating of 4A at 25°C. The device utilizes a TO-220AB three-pin through-hole package. It is designed for high-voltage switching applications requiring moderate current handling capabilities within a standard discrete transistor form factor.
Verify the specific datasheet revision to confirm exact saturation voltage parameters, as values may vary slightly between manufacturing batches or regional specifications. Ensure the TO-220AB pinout matches the target PCB footprint design before finalizing procurement orders to prevent installation errors.
Select this component when a 1000V rated IGBT with low current requirements is needed. The TO-220AB package facilitates easy mounting on heatsinks using standard hardware. Consider thermal management requirements based on the specific duty cycle and ambient temperature conditions of the intended application circuit.
This part belongs to the IXYS single IGBT transistor family. It shares the same voltage class as higher current variants like the IXGH series but offers lower current capacity. The numbering convention indicates the 1000V rating and general purpose classification within the manufacturer's discrete semiconductor portfolio.
The IXGP2N100A is a documented variant within the same product line. Verify if the A suffix denotes a specific parameter tolerance or packaging difference before substituting. Cross-reference electrical characteristics carefully to ensure compatibility with existing drive circuits.