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The IXGP30N60C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It belongs to the GenX3 series and utilizes Planar Technology (PT). The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 75 A at 25°C. Key electrical parameters include a saturation voltage of 2.5 V at 15 V gate drive and 30 A collector current, a gate charge of 77 nC, and switching times of 19 ns for turn-on and 60 ns for turn-off. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-220-3 package.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Request original manufacturer datasheets and test reports to confirm specifications match the official documentation. Ensure proper handling procedures are followed during storage and installation to maintain device integrity.
Select this component for applications requiring 600V blocking capability and moderate current handling up to 75A. Consider the thermal management requirements associated with the TO-220-3 package and the specific switching energy values provided in the datasheet for circuit design optimization.
This part is part of the IXYS GenX3 IGBT family, designed for general-purpose power switching applications. It represents a standard planar technology solution within the company's portfolio, offering a balance between conduction losses and switching speed for industrial electronics.
Check for direct replacements within the IXYS IXGP series or equivalent parts from other manufacturers with matching 600V/75A ratings and TO-220-3 packaging. Verify pinout compatibility and thermal resistance values before substitution.