IXGP48N60C3

Overview

The IXGP48N60C3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes PT (Punch-Through) technology and operates within a junction temperature range of -55°C to +150°C. The device features a maximum collector-emitter voltage (VCEO) of 600 V and supports a continuous collector current (Ic) of 75 A, with a peak pulse current (Icm) capability of 250 A. Key electrical parameters include a maximum on-state collector-emitter voltage (Vce(on)) of 2.5 V at 15 V gate drive and 30 A collector current. Switching characteristics measured at 400 V, 30 A, and 3 Ohm source resistance show turn-on time (td(on)) of 19 ns and turn-off time (td(off)) of 60 ns. Total gate charge is specified as 77 nC, with switching energies of 410 µJ for turn-on and 230 µJ for turn-off. The component is housed in a TO-220-3 through-hole package.

Feature Summary

• PT punch-through technology design for optimized switching performance
• High surge current capability supporting demanding load conditions
• Standard input type requiring conventional gate drive circuits

Applications

• Motor control systems
• Switched-mode power supplies
• Inverter circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to ensure correct packaging and compliance specifications. Confirm RoHS status and environmental classifications prior to integration. Note that this component may be subject to discontinuation or lifecycle changes; consult official PCN documents for availability updates and last-time buy information before finalizing procurement plans.

Selection Notes

Select this IGBT for applications requiring 600 V blocking voltage and up to 75 A continuous current handling. Ensure the gate drive circuit provides a minimum of 15 V to achieve the specified low saturation voltage. Verify thermal management capabilities to maintain junction temperatures within the +150°C limit under expected operating loads and ambient conditions.

Part Context

The IXGP48N60C3 belongs to the IXYS GenX3™ series of IGBTs. This series is characterized by punch-through technology designed for high-efficiency power switching. The component shares the TO-220-3 package form factor with other devices in the IXGP family, facilitating compatibility with standard mounting hardware and heatsink interfaces used in industrial power electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative components based on matching voltage ratings, current capacity, and package dimensions while verifying switching energy and gate charge specifications.