IXGP7N60BD1

Overview

The IXYS IXGP7N60BD1 is a single N-channel IGBT with an integrated antiparallel Fast Recovery Epitaxial Diode (FRED) housed in a PLUS247 package. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 7 A at 25°C. The device utilizes the HDMOS process for low on-state conduction losses and includes guaranteed short-circuit safe operating area capability. Key electrical parameters include a maximum collector-emitter saturation voltage of 3.8 V at 7 A and a gate charge of 25 nC. The component supports junction temperatures up to 150°C and is designed for medium-frequency switching applications.

Feature Summary

• Integrated antiparallel FRED diode within a single PLUS247 package
• Guaranteed short-circuit safe operating area capability
• HDMOS process technology for low conduction losses
• MOS gate drive for simplified circuit design

Applications

• AC motor speed control systems
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies

Procurement Notes

Verify the specific suffix and manufacturing date code against the latest IXYS datasheet before procurement, as component revisions may affect pinout or thermal characteristics. Confirm availability status directly with authorized distributors, as lead times vary by region. Ensure the supplier provides original manufacturer packaging to prevent counterfeit components. Cross-reference the part number with official obsolescence notices to confirm long-term supply viability.

Selection Notes

Select this component for applications requiring compact integration of switching and freewheeling functions in a single package. The 600V rating suits general-purpose industrial inverters and converters. Evaluate the 3.8V saturation voltage against thermal management requirements for high-duty-cycle operations. Consider the 25 nC gate charge when designing driver circuits for optimal switching speed and efficiency.

Part Context

The IXGP7N60BD1 belongs to the IXYS PLUS247 family, which combines an IGBT and a diode in one standard through-hole package. This integration reduces board space and assembly costs compared to discrete solutions. The series is engineered for robust performance in medium-power conversion stages, leveraging IXYS's HDMOS technology for reliability.

Replacement Considerations

Direct substitutes include the IXSK40N60BD1 for higher current capacity within the same package family. For equivalent voltage and current ratings, verify compatibility with other PLUS247 IGBT/Diode composites from IXYS or comparable manufacturers offering similar short-circuit SOA guarantees.