IXGP7N60CD1

Overview

The IXGP7N60CD1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 14 A. The device is housed in a TO-220-3 through-hole package with a maximum power dissipation of 75 W. This component belongs to the HiPerFAST Lightspeed series, designed for high-speed switching applications.

Feature Summary

• HiPerFAST Lightspeed series technology for optimized switching performance
• Standard gate input type configuration
• Through-hole mounting via TO-220-3 package

Applications

• High-frequency power conversion circuits
• Motor drive inverters
• Industrial power supplies

Procurement Notes

This component is classified as obsolete and no longer manufactured. Procurement requires sourcing from remaining distributor inventory or secondary market channels. Verify part authenticity carefully due to potential availability of refurbished units. Confirm RoHS compliance status with the specific supplier prior to purchase.

Selection Notes

Select this IGBT for low-current applications requiring 600 V blocking capability. The 14 A continuous rating suits smaller load requirements. Consider thermal management constraints associated with the 75 W dissipation limit in the TO-220-3 package when designing heat sinks.

Part Context

The IXGP7N60CD1 is part of IXYS's HiPerFAST product line, specifically the Lightspeed series. This family targets efficient power switching in compact form factors. The device utilizes standard silicon IGBT technology within a robust three-terminal leaded package suitable for general-purpose industrial electronics.

Replacement Considerations

No direct substitute part numbers are confirmed in the provided documentation. Users must evaluate alternative 600 V, 14 A IGBTs in TO-220-3 packages based on electrical parameter matching.