IXGQ20N120B

Description：IGBT PT 1200V 40A TO-3P
Series：-

SKU:19e026a45337 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 1200V 40A TO-3P
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：100 A
Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 20A
Power - Max：190 W
Switching Energy：2.1mJ (off)
Input Type：Standard
Gate Charge：62 nC
Td (on/off) @ 25°C：20ns/270ns
Test Condition：960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：40 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P
Grade：-
Qualification：-

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IXGQ20N120B

Overview

The IXGQ20N120B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 40A. The device is housed in a TO-3P-3 (SC-65-3) package, designed for through-hole mounting. It operates with a maximum power dissipation of 190W and includes an integrated anti-parallel Fast Recovery Epitaxial Diode (FRED). The component utilizes MOS gate technology for turn-on control.

Feature Summary

Integrated anti-parallel FRED diode for resonant applications
MOS gate turn-on technology
International standard TO-3P-3 package

Applications

Induction heating systems
Resonant power supplies
Rice cookers

Procurement Notes

Verify the specific datasheet version to confirm electrical characteristics and thermal resistance values. Ensure the procurement channel provides original manufacturer documentation. Check for RoHS compliance status if required by project specifications. Confirm the package type matches the intended PCB footprint. Validate that the integrated diode parameters meet circuit requirements.

Selection Notes

Select this component for high-voltage switching applications requiring integrated freewheeling capabilities. The TO-3P package suits applications needing robust mechanical mounting and heat dissipation. Consider the 1200V rating for industrial and consumer power conversion circuits. Evaluate thermal management solutions based on the 190W dissipation limit. Verify compatibility with induction heating topologies.

Part Context

This IGBT belongs to the discrete semiconductor product category from IXYS Corporation. It is part of the broader family of insulated gate bipolar transistors designed for power electronics. The device combines IGBT switching performance with fast recovery diode characteristics. It targets markets such as home appliances and industrial power supplies.