IXGQ28N120BD1

IXGQ28N120BD1

  • Description:IGBT 1200V 50A TO-3P
  • Series:-

SKU:b1fbd301288f Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 1200V 50A TO-3P
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):50 A
  • Current - Collector Pulsed (Icm):150 A
  • Vce(on) (Max) @ Vge, Ic:3.5V @ 15V, 28A
  • Power - Max:250 W
  • Switching Energy:2mJ (off)
  • Input Type:Standard
  • Gate Charge:92 nC
  • Td (on/off) @ 25°C:30ns/180ns
  • Test Condition:960V, 28A, 5Ohm, 15V
  • Reverse Recovery Time (trr):40 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

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IXGQ28N120BD1

Overview

The IXGQ28N120BD1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter maximum voltage of 1200V and a continuous collector current rating of 50A at 25°C. The device utilizes a TO-3P-3 through-hole package configuration. Key electrical parameters include a collector-emitter saturation voltage of 2.6V and a power dissipation capacity of 250W. The component operates within a temperature range from -55°C to +150°C, with a gate-emitter voltage limit of ±20V.

Feature Summary

  • High-voltage switching capability for robust performance in demanding power electronics environments
  • Single-channel configuration designed for efficient integration into standard circuit topologies
  • Through-hole mounting structure providing mechanical stability for thermal management applications

Applications

  • Industrial motor drive systems requiring high-voltage isolation
  • Uninterruptible Power Supply (UPS) inverter circuits
  • High-frequency power conversion equipment

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with authorized distributors or the manufacturer before procurement. Ensure that the ordering suffix matches the required packaging format. Confirm that the thermal interface materials and mounting hardware are compatible with the TO-3P-3 package dimensions to maintain reliable electrical contact and heat dissipation during operation.

Selection Notes

Select this component when designing circuits requiring 1200V blocking capability with moderate current handling up to 50A. Consider the 2.6V saturation voltage for efficiency calculations in low-to-medium frequency switching applications. Evaluate the thermal resistance characteristics against the expected ambient temperature and heat sink capabilities to ensure junction temperatures remain within the specified operational limits.

Part Context

This IGBT belongs to the IXGQ series, which represents IXYS's portfolio of discrete power semiconductor devices. These components are engineered for general-purpose power switching applications. The series emphasizes reliability and thermal performance, serving as a foundational element in various industrial power conversion architectures where high voltage and moderate current are required.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing with other manufacturers requires careful evaluation of pinout compatibility, voltage ratings, and thermal characteristics to ensure functional equivalence without modifying the existing circuit design.

IXGQ28N120BD1IXGQ28N120BD1

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