IXGQ85N33PCD1

Overview

The IXGQ85N33PCD1 is a Polar High Speed IGBT with an integrated anti-parallel diode, manufactured by IXYS. It features a TO-3P package and operates with a collector-emitter voltage of 330V. The device supports a continuous collector current of 85A at 25°C and a peak pulse current of 340A. Maximum on-state saturation voltage is 2.10V at 50A and 3.00V at 100A. Total gate charge is 80nC. Thermal resistance from junction to case is 0.833°C/W for the IGBT and 0.95°C/W for the diode. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Low VCE(sat) for minimum on-state conduction losses
• Fast switching capability
• Integrated anti-parallel diode

Applications

• Plasma Display Power (PDP) screen drivers

Procurement Notes

Verify component authenticity against official IXYS documentation. Confirm that the ordering suffix does not alter electrical characteristics unless explicitly stated in the datasheet. Ensure the TO-3P package dimensions match design requirements. Check for RoHS compliance status through manufacturer resources.

Selection Notes

Select this component for high-speed switching applications requiring low conduction losses. Evaluate thermal management based on the specified RthJC values. Ensure gate drive circuits can handle the 80nC total gate charge efficiently. Verify that the 330V rating aligns with system voltage requirements.

Part Context

This part belongs to the IXYS Polar series of high-speed IGBTs. It integrates an anti-parallel diode suitable for specific power conversion topologies. The TO-3P package provides robust mechanical mounting and thermal dissipation capabilities for industrial and display driver environments.

Replacement Considerations

Consult IXYS documentation for direct replacements. Verify pinout compatibility and thermal resistance specifications when substituting.