IXGQ90N27PB

Description：IGBT 270V 90A 150W TO3P
Series：Polar™

SKU:1f815dbfaad3 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 270V 90A 150W TO3P
Series：Polar™
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：270 V
Current - Collector (Ic) (Max)：90 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
Power - Max：150 W
Switching Energy：-
Input Type：Standard
Gate Charge：79 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P
Grade：-
Qualification：-

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IXGQ90N27PB

Overview

The IXGQ90N27PB is a Silicon N-channel Insulated Gate Bipolar Transistor (IGBT) from the Polar series, designed for high-power applications. It features a maximum collector-emitter voltage of 270V and a continuous collector current of 90A. The device exhibits a typical on-state voltage of 2.1V at a gate drive of 15V and collector current of 50A. Key switching parameters include a total gate charge of 79nC and a maximum power dissipation of 150W. It operates within a temperature range of -40°C to +150°C and utilizes a TO-3P through-hole package.

Feature Summary

Utilizes Polar technology optimized for plasma display panel applications
Features low on-state voltage characteristics for efficient conduction
Designed with standard input type for straightforward gate driving

Applications

Plasma Display Panel (PDP) driver circuits
High-frequency inverter systems
Power supply units requiring robust switching performance

Procurement Notes

Verify component authenticity against official IXYS documentation due to potential availability variations. Confirm that the specific order matches the TO-3P package configuration and RoHS compliance status. Ensure that design-in validation accounts for the thermal resistance limits associated with the 150W power dissipation rating under actual operating conditions.

Selection Notes

Select this component when a 270V blocking capability and 90A continuous current are required in a through-hole format. Consider the 79nC gate charge for driver selection to ensure adequate switching speed without excessive loss. Evaluate the 2.1V saturation voltage impact on system efficiency compared to alternative technologies suitable for PDP or similar high-current AC loads.

Part Context

This IGBT belongs to the IXGQ series, which represents IXYS's Polar family of transistors. These devices are specifically engineered to meet the demanding requirements of plasma display technology, offering a balance of high current handling and fast switching speeds within a rugged TO-3P industrial package.