SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXYS IXGR24N60CD1 is a single Insulated Gate Bipolar Transistor (IGBT) belonging to the HiPerFAST™ series. It features a Planar Trench technology with an integrated Fast Recovery Anti-Parallel Diode (FRD). The device is rated for a collector-emitter breakdown voltage of 600V and a continuous collector current of 35A at 25°C. Key electrical parameters include a maximum saturated collector-emitter voltage of 2.7V at 35A, a gate charge of 95nC, and a switching energy of 200µJ (turn-off). It operates within a junction temperature range of -55°C to 150°C and utilizes the ISOPLUS247™ through-hole package.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the specific suffix 'CD1' corresponds to the intended packaging and variant details. Ensure compliance with RoHS directives if required for the target assembly process.
Select this component when a 600V rating and approximately 35A continuous current capability are required. The integrated FRD simplifies circuit design for inductive loads. Consider the thermal resistance of the ISOPLUS247™ package for heat sink sizing in high-power applications.
This part belongs to the IXYS HiPerFAST™ family, which focuses on high-efficiency power switching solutions. The IXGR24N60CD1 shares the 600V platform common across many IXYS IGBTs but is distinguished by its specific current rating and trench technology generation.
Direct substitutes may include other HiPerFAST™ devices with similar Vces and Ic ratings. Verify pinout compatibility and thermal characteristics before replacing. Cross-reference with IXGH or IXGN series parts from the same manufacturer for potential equivalents.