IXGR32N170AH1

Description：IGBT NPT 1700V 26A ISOPLUS247
Series：-

SKU:fed1f6f3fd47 Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1700V 26A ISOPLUS247
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：26 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：5.2V @ 15V, 21A
Power - Max：200 W
Switching Energy：1.5mJ (off)
Input Type：Standard
Gate Charge：155 nC
Td (on/off) @ 25°C：46ns/260ns
Test Condition：1360V, 21A, 2.7Ohm, 15V
Reverse Recovery Time (trr)：230 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：ISOPLUS247™
Grade：-
Qualification：-

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IXGR32N170AH1

Overview

The IXGR32N170AH1 is a high-voltage NPT IGBT with an integrated diode in the ISOPLUS247 package. It features a collector-emitter voltage of 1700 V and a continuous collector current of 38 A at 25°C. The typical saturation voltage is 3.5 V, with a maximum of 3.1 V at 125°C. Gate threshold voltage ranges from 3.0 to 5.0 V. Total gate charge is typically 155 nC. Switching times include a turn-on delay of 45 ns and a fall time of 250 ns. Thermal resistance junction-to-case is 0.65 K/W for the IGBT and 1.5 K/W for the diode.

Feature Summary

Electrically isolated tab design
Rugged NPT structure
Molding epoxies meet UL 94 V-0 flammability classification

Applications

Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode power supplies

Procurement Notes

Verify datasheet version DS99318(05/05) and confirm ISOPLUS247 packaging. Check Littelfuse or IXYS official sources for current availability status as this component may be subject to lifecycle changes. Ensure thermal management aligns with specified RthJC values.

Selection Notes

Select based on 1700 V blocking capability and 38 A continuous current rating. Consider the 3.5 V saturation voltage for conduction losses. Verify switching energy requirements against the provided Eon and Eoff values at specific test conditions.

Part Context

Part of the IXGR series featuring electrically isolated tabs. Utilizes NPT technology for ruggedness. Packaged in ISOPLUS247 for surface mount applications. Designed for high-power industrial and motor drive environments.

Replacement Considerations

Refer to IXGH32N170 datasheets for additional IGBT characteristics comparison. Verify pinout compatibility and thermal resistance differences before substitution.

FAQ

What is the maximum repetitive peak reverse voltage of the integrated diode?

The datasheet specifies a collector-emitter breakdown voltage (VCES) of 1700 V. Specific diode reverse voltage ratings are not explicitly detailed beyond the device's overall VCES specification.