IXGR35N120C

Overview

The IXGR35N120C is a HiPerFAST IGBT manufactured by IXYS, designed for high-voltage power switching applications. It features a 1200V collector-emitter voltage rating and supports a continuous collector current of 70A. The device utilizes ISOPLUS247 packaging to facilitate efficient thermal management and mechanical mounting. With a maximum power dissipation of 200W, this single N-channel insulated gate bipolar transistor operates within a junction temperature range of -55°C to +150°C, providing robust performance in demanding industrial environments.

Feature Summary

• HiPerFAST technology optimized for low switching losses
• ISOPLUS247 package for enhanced thermal conductivity
• High noise immunity via positive threshold voltage

Applications

• Motor drives and inverters
• Switched-mode power supplies (SMPS)
• Industrial motor control systems

Procurement Notes

Verify the specific suffix 'C' against official datasheets to confirm pinout and electrical characteristics, as variations exist within the IXGR series. Confirm RoHS compliance status through the manufacturer's latest documentation before integration into regulated products.

Selection Notes

Select this component for designs requiring 1200V blocking capability with high current handling. Ensure the thermal design accommodates the 200W dissipation limit. Compare against IXGX35N120B for potential upgrades or alternatives based on saturation voltage requirements.

Part Context

This part belongs to the IXGR series of HiPerFAST IGBTs from IXYS. These devices are engineered for efficiency in medium-to-high power converters. The ISOPLUS247 form factor is standard for high-power discrete modules, allowing direct heatsink mounting without insulators.

Replacement Considerations

The IXGX35N120B is a documented alternative within the IXYS portfolio. Verify parameter compatibility regarding saturation voltage and thermal resistance before substitution.