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The IXGR39N60BD1 is a HiPerFAST IGBT from IXYS Corporation, featuring an electrically isolated backside within the ISOPLUS247 package. It provides a collector-emitter breakdown voltage of 600V and a continuous collector current of 39A at 25°C. The device integrates a fast recovery anti-parallel diode with a reverse recovery time of approximately 150ns. Key electrical characteristics include a maximum gate-emitter voltage of ±20V and a typical saturation voltage of 1.8V at 39A. Designed for high power density, it supports junction temperatures up to 150°C and offers square RBSOA capabilities.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm the specific suffix 'D1' indicates the integrated diode variant. Request original manufacturer datasheets and test reports to validate electrical parameters against the official specification sheet before integration into designs.
Select this component for applications requiring galvanic isolation between the gate drive circuit and the heatsink. The ISOPLUS247 package eliminates the need for additional insulating materials. Ensure thermal management solutions accommodate the 150W power dissipation rating and verify that the switching frequency aligns with the device's 150ns turn-off time characteristics.
This part belongs to the IXYS HiPerFAST series, designed for medium-frequency switching applications. The ISOPLUS247 package distinguishes it from standard TO-247 variants by providing electrical isolation. It serves as a robust solution for high-power conversion systems where safety isolation and compact form factors are critical design constraints.
Direct substitutes may include other IXYS HiPerFAST devices with similar voltage and current ratings, such as the IXGH39N60B series. Cross-manufacturer replacements require careful verification of pinout compatibility, thermal resistance values, and electrical characteristics to ensure circuit performance remains within safe operating limits.