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The IXGR60N60C2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the HiPerFAST series by IXYS. It features a collector-emitter breakdown voltage of 600V and a continuous collector current of 56A at 25°C, with a pulsed current rating of 200A. The device exhibits a maximum saturated collector-emitter voltage of 2.7V at 30A and 15V gate drive. Key switching parameters include a turn-on delay of 18ns, turn-off delay of 90ns, and an off-state switching energy of 200µJ under test conditions of 400V, 30A, and 3Ω gate resistance. It operates within a junction temperature range of -55°C to 150°C and is housed in an ISOPLUS247 package.
Verify component authenticity through authorized IXYS distributors or certified agents. Request original manufacturer datasheets and traceability documentation to confirm part status and lot codes. Ensure handling procedures comply with electrostatic discharge (ESD) protection standards during storage and assembly.
Select this component for applications requiring high current density and efficient thermal management in the 600V class. The ISOPLUS247 package facilitates direct heatsink mounting. Evaluate switching frequency requirements against the specified energy loss values to ensure thermal performance meets system constraints.
This IGBT belongs to the IXGR60N60 family, sharing the 600V voltage rating and ISOPLUS247 form factor. Variants within this series typically differ in current ratings or specific switching characteristics tailored for distinct power levels while maintaining mechanical interchangeability.
Direct substitutes may include IXGR40N60C2 for lower current needs or IXGR60N60C2D1 for electrically isolated tab configurations. Verify pinout compatibility and thermal interface requirements before implementation.