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The IXGR60N60C2D1 is a single N-channel Insulated Gate Bipolar Transistor from the Lightspeed 2 series, manufactured by IXYS. It features an electrically isolated back surface design housed in an ISOPLUS247 package that meets TO-247AD outline dimensions. The device utilizes the latest generation HDMOS process for high current handling and fast switching speeds. Key electrical parameters include a collector-emitter breakdown voltage of 600 V and a continuous collector current of 75 A at 25°C. The maximum collector-emitter saturation voltage is 2.5 V at 40 A with a 15 V gate drive. It operates within a junction temperature range of -55°C to +150°C.
Verify component authenticity through authorized IXYS distributors or certified agents. Confirm lot codes and date codes against current manufacturing records. Check for RoHS compliance status as per specific revision requirements. Ensure storage conditions prevent moisture damage prior to soldering. Review datasheet revisions for any parameter updates affecting circuit design.
Select this component when high-frequency operation above 40 kHz is required alongside robust current handling. The isolated tab simplifies heatsink integration in high-voltage circuits without additional insulators. Compare saturation voltage and switching energy losses against alternative IGBTs for efficiency optimization. Ensure gate drive capabilities match the specified 15 V operating voltage for optimal performance.
This device belongs to the IXYS Lightspeed 2 series, designed for high-speed switching applications. It succeeds earlier HiPerFAST generations by incorporating improved HDMOS technology. The ISOPLUS247 package distinguishes it from standard TO-247 devices by providing electrical isolation on the back surface, facilitating easier thermal management in dense power electronics designs.
Direct substitutes may include other IXYS Lightspeed series IGBTs with similar voltage and current ratings. Cross-manufacturer replacements require verification of pinout compatibility and thermal resistance characteristics. Ensure replacement devices maintain the electrically isolated back surface feature if system grounding constraints demand it.