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Product Detailed Parameters
- Description：IGBT PT 600V 75A ISOPLUS247
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：260 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 40A
- Power - Max：170 W
- Switching Energy：830µJ (on), 450µJ (off)
- Input Type：Standard
- Gate Charge：115 nC
- Td (on/off) @ 25°C：24ns/70ns
- Test Condition：480V, 40A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：ISOPLUS247™
- Grade：-
- Qualification：-
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Overview
The IXGR60N60C3C1 is a single Insulated Gate Bipolar Transistor (IGBT) from the GenX3 series, manufactured by IXYS. It features a silicon carbide (SiC) anti-parallel diode integrated within the package. The device has a collector-emitter voltage rating of 600 V and a continuous collector current of 75 A at 25°C. It utilizes the ISOPLUS247™ through-hole package. Maximum power dissipation is rated at 170 W, with an operating temperature range spanning from -55°C to +150°C.
Feature Summary
- Integrates a silicon carbide anti-parallel diode for improved switching performance
- Utilizes GenX3 technology for optimized conduction and switching characteristics
- Designed in a robust ISOPLUS247™ through-hole package
Applications
- High-frequency power conversion systems
- Motor drive inverters
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify component authenticity against official IXYS documentation due to potential availability constraints. Confirm that the specific C3C1 suffix denotes the integrated SiC diode variant rather than standard IGBT configurations. Ensure thermal management solutions align with the 170 W dissipation rating and ISOPLUS247™ mounting requirements for reliable operation.
Selection Notes
Select this component when high-speed switching and low reverse recovery losses are critical. The integrated SiC diode reduces overall system complexity compared to discrete diode solutions. Consider the 600V rating and 75A current capacity relative to load requirements. Evaluate thermal resistance paths suitable for the ISOPLUS247™ package to maintain junction temperatures within the specified operational limits.
Part Context
This part belongs to the IXYS GenX3 family, which combines advanced IGBT structures with fast recovery or SiC diodes. The IXGR60N60C3C1 specifically targets applications requiring efficient high-voltage switching. It represents a evolution in IXYS' discrete power modules, focusing on reducing switching losses while maintaining ruggedness in industrial environments.
Replacement Considerations
Direct substitutes include the IXGR60N60U1, though it lacks the integrated SiC diode. Verify pin compatibility and thermal characteristics when considering alternatives from other manufacturers offering similar 600V/75A specifications with through-hole packaging.
