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The IXGR72N60A3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the GenX3 series, manufactured by IXYS. It features a 600V collector-emax voltage rating and a continuous collector current of 52A at 25°C, with a pulsed current capacity of 400A. The device utilizes ISOPLUS247 surface-mount packaging for thermal efficiency. Key electrical parameters include a gate charge of 230nC, turn-on time of 63ns, and a power dissipation rating of 200W. It operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized IXYS distributors or Littelfuse channels. Confirm RoHS compliance status and specific manufacturing lot dates upon order placement. Ensure storage conditions adhere to semiconductor handling standards to prevent moisture damage prior to soldering.
Select this IGBT for applications requiring robust 600V blocking capability combined with efficient high-speed switching. The ISOPLUS247 package is suitable for automated surface-mount assembly processes. Evaluate thermal requirements against the 200W dissipation limit and ensure gate drive compatibility with the specified 230nC charge requirement.
This discrete IGBT belongs to the IXYS GenX3 family, designed for medium-power industrial applications. It serves as a standalone switching element, distinct from multi-module configurations. The component represents a balance between conduction losses and switching speed, targeting efficiency in power conversion topologies.
Direct substitutes may include IXGN72N60A3 or other GenX3 series variants with matching voltage and current ratings. Verify pinout compatibility and thermal resistance specifications before substitution. Consult official IXYS documentation for cross-reference lists.