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Product Detailed Parameters
- Description：IGBT NPT 1700V 20A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：70 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 10A
- Power - Max：110 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：32 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXGT10N170 is a single NPT (Non-Punch Through) Insulated Gate Bipolar Transistor manufactured by IXYS. It features a maximum collector-emitter voltage of 1700 V and a continuous collector current of 10 A at 25°C. The device has a typical collector-emitter saturation voltage of 4.0 V. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 75 W of power. The component is housed in a D3PAK-3 (TO-268-3) surface-mount package with a maximum gate-emitter voltage rating of ±20 V.
Feature Summary
- Utilizes NPT technology for robust high-voltage performance
- Designed for surface-mount integration via TO-268-3 package
- Supports wide operating temperature ranges up to 150°C
Applications
- High-voltage industrial motor drives
- Switch-mode power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix or revision code against the manufacturer's latest datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability varies. Ensure thermal management solutions match the 75 W dissipation rating for reliable operation.
Selection Notes
Select this component when a 1700 V rating and approximately 10 A continuous current are required in a surface-mount form factor. Compare the 4.0 V saturation voltage against system efficiency targets. Consider the TO-268-3 package constraints for PCB layout and heat sinking capabilities relative to the 75 W power dissipation limit.
Part Context
This part belongs to the IXYS IXGT series of high-voltage IGBTs. It shares the 1700 V blocking capability and D3PAK-3 packaging with other members like the IXGT6N170 and IXGT16N170A, differing primarily in current handling and saturation voltage characteristics.
Replacement Considerations
Direct substitutes include the IXGT6N170 for lower current needs or the IXGT16N170A for higher current capacity, provided pinouts and thermal profiles are compatible. Verify that any replacement maintains the 1700 V rating and NPT technology for equivalent switching behavior.
