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The IXGT10N170A is a single NPT (Non-Punch Through) silicon IGBT manufactured by IXYS. It features a TO-268AA (D3PAK) surface-mount package designed for high-voltage power switching applications. The device is rated for a maximum collector-emitter voltage of 1700 V and supports a continuous collector current of 10 A at 25°C. Key electrical parameters include a typical saturation voltage of approximately 3.3 V to 4.0 V depending on specific test conditions, with a maximum gate-emitter voltage rating of ±20 V. The component operates within a junction temperature range of -55°C to +150°C.
Verify the exact datasheet revision and manufacturer lot codes upon receipt. Confirm that the TO-268AA footprint matches the design layout. Check for RoHS compliance status as per the latest manufacturer documentation. Ensure storage conditions prevent moisture damage prior to soldering.
Select this component when a surface-mount solution is required for 1700 V circuits. Compare the thermal resistance characteristics against available through-hole alternatives like the IXBH series if heat dissipation constraints are critical. Evaluate gate charge requirements against the driving circuit capabilities.
This part belongs to the IXYS BIMOSFET family of high-voltage IGBTs. It serves as a surface-mount alternative to the through-hole IXBT or IXBH series, offering similar electrical performance in a compact form factor suitable for automated PCB assembly processes.
Direct pin-compatible replacements may include other IXYS TO-268AA IGBTs with matching voltage ratings. Verify thermal resistance and saturation voltage specifications carefully when substituting with parts from different manufacturers to ensure circuit compatibility.