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The IXGT15N120B is a HiPerFAST IGBT manufactured by IXYS, designed for high-power density applications. It features a single N-channel configuration housed in a JEDEC TO-268 surface-mount package. The device supports a maximum collector-emitter voltage of 1200V and a continuous collector current of 30A. Key electrical parameters include a low saturation voltage of 3.2V at 15V gate drive and 15A collector current. It operates within a temperature range of -55°C to +150°C junction temperature.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Check datasheet revisions for updates on electrical characteristics and mechanical dimensions. Confirm RoHS compliance status prior to integration into final assemblies requiring environmental certification.
Select this component for designs requiring surface-mount IGBTs with high voltage ratings. Ensure thermal management solutions accommodate the specified power dissipation limits. Verify that the driving circuit can provide the required 15V gate signal for optimal saturation performance.
This part belongs to the IXYS HiPerFAST series, which focuses on high-efficiency power switching. It shares the TO-268 form factor with other models like the IXGT35N120B but offers different current handling capabilities. The series targets industrial and consumer power electronics markets.
Direct substitutes may include the IXGT15N120BD1 for integrated diode versions or the IXGT15N120B2D1. Evaluate pin compatibility and thermal resistance when considering alternative packages such as TO-247AD variants from the same manufacturer.