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The IXGT16N170AH1 is a single NPT silicon IGBT from IXYS, housed in a TO-268AA surface-mount package. It features a maximum collector-emitter voltage of 1700 V and a continuous collector current of 16 A at 25°C. The device has a power dissipation rating of 190 W and a typical collector-emitter saturation voltage of 3.5 V. It operates within a junction temperature range of -55°C to +150°C.
Verify the exact suffix AH1 against official datasheets to confirm pinout and thermal characteristics. Confirm RoHS compliance status with the manufacturer prior to integration. Ensure ordering documentation matches the specific part number variant to avoid functional mismatches in high-voltage designs.
Select this component for applications requiring 1700 V blocking capability with moderate current handling. The TO-268AA package facilitates automated surface-mount placement. Evaluate thermal management requirements based on the 190 W dissipation limit and ensure gate drive voltages remain within specified limits.
This part belongs to the IXGT16 series of high-voltage IGBTs manufactured by IXYS. It shares the same electrical ratings as the IXBT16N170A but utilizes a different surface-mount package configuration. The series targets industrial power conversion needs where reliable high-voltage switching is essential.
The IXBT16N170A is a verified equivalent offering identical electrical specifications. Substitution requires adapting the PCB layout to accommodate the through-hole D3PAK-3 package instead of the surface-mount TO-268AA form factor.