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Product Detailed Parameters
- Description：IGBT PT 1200V 40A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 20A
- Power - Max：190 W
- Switching Energy：2.1mJ (off)
- Input Type：Standard
- Gate Charge：72 nC
- Td (on/off) @ 25°C：25ns/150ns
- Test Condition：960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXGT20N120B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter voltage rating of 1200 V and a continuous collector current capacity of 40 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.5 V and a fall time of 380 ns. Packaged in standard international JEDEC TO-247 or TO-268 formats, it supports surface mount or through-hole installation styles suitable for high-power switching applications.
Feature Summary
- Utilizes trench gate technology for optimized switching performance
- Features square reverse bias safe operating area (RBSOA)
- Designed with short-circuit capability for robust protection
Applications
- Induction heating systems
- Motor drive inverters
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific package variant required, as the part number may correspond to either TO-247 or TO-268 configurations depending on the suffix or ordering code. Confirm thermal management requirements against the datasheet's maximum junction temperature limits. Ensure gate drive voltages remain within specified absolute maximum ratings to prevent device degradation during operation.
Selection Notes
Select this component for applications requiring high-voltage blocking capabilities combined with moderate current handling. The 1200V rating makes it suitable for mains-connected or medium-voltage DC systems. Consider the 2.5V saturation voltage for conduction loss calculations and the 380ns fall time for switching frequency limitations in the target circuit design.
Part Context
This IGBT belongs to the IXGT series, representing a generation of devices designed for general-purpose power switching. It complements other IXYS products like the IXFH series MOSFETs and IXGH series IGBTs, offering a balance between low conduction losses and fast switching speeds for industrial power electronics.
Replacement Considerations
Direct substitutes include the IXGT20N120 and IXGT20N120C, which share identical electrical characteristics and pinouts. Verify that any replacement maintains the same package outline dimensions and thermal interface specifications to ensure compatibility with existing heatsink arrangements.
