IXGT24N170

IXGT24N170

  • Description:IGBT NPT 1700V 50A TO-268AA
  • Series:-

SKU:d089873214c9 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT NPT 1700V 50A TO-268AA
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):50 A
  • Current - Collector Pulsed (Icm):150 A
  • Vce(on) (Max) @ Vge, Ic:3.3V @ 15V, 24A
  • Power - Max:250 W
  • Switching Energy:8mJ (off)
  • Input Type:Standard
  • Gate Charge:106 nC
  • Td (on/off) @ 25°C:42ns/200ns
  • Test Condition:1360V, 50A, 5Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package:TO-268AA
  • Grade:-
  • Qualification:-

Download product information

IXGT24N170

Overview

The IXGT24N170 is a single NPT silicon IGBT in a TO-268-3 (D3PAK) surface-mount package. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 24 A at 25°C, with a pulsed current rating of 75 A. The device has a typical collector-emitter saturation voltage of 2.5 V and a maximum power dissipation of 250 W. Operating junction temperature ranges from -55°C to +150°C. Gate-emitter voltage limits are ±20 V, with a leakage current of 100 nA.

Feature Summary

  • Utilizes Non-Punch-Through (NPT) technology for robust high-voltage performance.
  • Designed for surface-mount installation in compact D3PAK packages.
  • Capable of handling high thermal loads with up to 250 W power dissipation.

Applications

  • High-frequency switching power supplies
  • Motor drive inverters
  • Uninterruptible power systems

Procurement Notes

Verify the specific suffix or revision level against the manufacturer's latest datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Check for any product change notices regarding packaging or material composition updates that may affect assembly processes.

Selection Notes

Select this component when a high-voltage, surface-mount IGBT is required for moderate current applications. The TO-268-3 package facilitates automated PCB assembly while providing adequate thermal management for 250 W dissipation. Ensure gate drive circuits support the specified ±20 V limit and account for the 2.5 V saturation voltage drop in efficiency calculations.

Part Context

This part belongs to the IXYS IXGT series of standard NPT IGBTs. It shares the same voltage class and package type as other devices in the family but is distinguished by its specific 24 A current rating and 2.5 V saturation characteristic. It serves as a surface-mount alternative to through-hole variants like the IXGH series.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 1.7 kV rating, 24 A continuous current, TO-268-3 package, and NPT technology specifications.

FAQ

What is the maximum pulsed collector current for the IXGT24N170?

The maximum pulsed collector current (Icm) is 75 A.

Does the IXGT24N170 use punch-through or non-punch-through technology?

It utilizes Non-Punch-Through (NPT) technology.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +150°C.

IXGT24N170IXGT24N170

Click on the inquiry