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The IXGT24N170 is a single NPT silicon IGBT in a TO-268-3 (D3PAK) surface-mount package. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 24 A at 25°C, with a pulsed current rating of 75 A. The device has a typical collector-emitter saturation voltage of 2.5 V and a maximum power dissipation of 250 W. Operating junction temperature ranges from -55°C to +150°C. Gate-emitter voltage limits are ±20 V, with a leakage current of 100 nA.
Verify the specific suffix or revision level against the manufacturer's latest datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Check for any product change notices regarding packaging or material composition updates that may affect assembly processes.
Select this component when a high-voltage, surface-mount IGBT is required for moderate current applications. The TO-268-3 package facilitates automated PCB assembly while providing adequate thermal management for 250 W dissipation. Ensure gate drive circuits support the specified ±20 V limit and account for the 2.5 V saturation voltage drop in efficiency calculations.
This part belongs to the IXYS IXGT series of standard NPT IGBTs. It shares the same voltage class and package type as other devices in the family but is distinguished by its specific 24 A current rating and 2.5 V saturation characteristic. It serves as a surface-mount alternative to through-hole variants like the IXGH series.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 1.7 kV rating, 24 A continuous current, TO-268-3 package, and NPT technology specifications.
The maximum pulsed collector current (Icm) is 75 A.
It utilizes Non-Punch-Through (NPT) technology.
The operating junction temperature range is -55°C to +150°C.