IXGT25N250HV

Overview

The IXGT25N250HV is a high-voltage Insulated Gate Bipolar Transistor manufactured by IXYS. It features a collector-emitter voltage (VCEO) of 2500 V and a continuous collector current of 60 A at 25°C. The device has a power dissipation rating of 250 W and utilizes the TO-268HV surface-mount package. It operates within a temperature range of -55°C to +175°C, with a maximum gate-emitter voltage of ±20 V.

Feature Summary

• Designed for high-voltage applications requiring robust switching performance
• Utilizes XPT technology for optimized trade-off between conduction losses and switching speed
• Square Reverse Bias Safe Operating Area (RBSOA) ensures reliable operation under short-circuit conditions

Applications

• Capacitor discharge circuits
• High-voltage DC link choppers
• Induction heating systems

Procurement Notes

Verify the exact suffix designation against the manufacturer's latest datasheet to confirm specific thermal and electrical characteristics. Ensure the ordering part number matches the required package variant and that all regulatory compliance requirements are met for the intended application environment.

Selection Notes

Select this component for designs requiring 2500 V blocking capability with moderate current handling in a surface-mount form factor. Consider the thermal resistance of the TO-268HV package and ensure adequate heatsinking to maintain junction temperatures within the specified operational limits during high-power cycling.

Part Context

This device belongs to IXYS' high-voltage IGBT portfolio, specifically engineered for industrial power conversion. It complements lower-voltage counterparts by providing enhanced breakdown voltage while maintaining competitive switching characteristics suitable for medium-frequency power electronics applications.

Replacement Considerations

Direct substitutes include other 2500 V, 60 A IGBTs in TO-268HV packages from IXYS or compatible manufacturers, provided pinout compatibility and thermal specifications align.