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Product Detailed Parameters
- Description：IGBT PT 1200V 50A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 28A
- Power - Max：250 W
- Switching Energy：2.2mJ (off)
- Input Type：Standard
- Gate Charge：92 nC
- Td (on/off) @ 25°C：30ns/210ns
- Test Condition：960V, 28A, 5Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXGT28N120BD1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and features a D3PAK-3 (TO-268-3) surface-mount package. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 28 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.5 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 300 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates GenX3™ trench field-stop IGBT technology for optimized switching performance.
- Features an integrated anti-parallel Fast Recovery Diode (FRD) for inductive load commutation.
- Designed with low saturation voltage characteristics to minimize conduction losses.
Applications
- High-frequency motor drive inverters
- Switch-mode power supplies (SMPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix 'BD1' against the manufacturer's official datasheet to confirm the presence of the integrated diode and exact pinout configuration. Ensure thermal management solutions align with the 300 W power dissipation rating and TO-268-3 package constraints. Confirm RoHS compliance status through the latest environmental declaration documents provided by IXYS.
Selection Notes
Select this component when a surface-mount IGBT with an integrated freewheeling diode is required for high-voltage applications. The D3PAK-3 package offers a compact footprint suitable for automated assembly. Compare the 3.5 V saturation voltage and 28 A current rating against system requirements to ensure adequate headroom for thermal and electrical loads.
Part Context
This part belongs to the IXGT28N120 series of single IGBTs from IXYS. It is designed for general-purpose high-power switching applications requiring robust performance in a surface-mount form factor. The series typically targets industrial and consumer electronics markets needing reliable high-voltage control.
Replacement Considerations
Potential substitutes include other IXYS single IGBTs with integrated diodes in the TO-268-3 package, such as the IXGT28N120B or IXGT30N120B3D1, provided their electrical ratings and pinouts are compatible. Verify that alternative parts meet the same voltage, current, and thermal specifications.
