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Product Detailed Parameters
- Description：IGBT PT 1200V 70A TO-268AA
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：140 A
- Vce(on) (Max) @ Vge, Ic：3.3V @ 15V, 35A
- Power - Max：300 W
- Switching Energy：3.8mJ (off)
- Input Type：Standard
- Gate Charge：170 nC
- Td (on/off) @ 25°C：50ns/180ns
- Test Condition：960V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXGT35N120B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and is housed in a TO-268-3 surface-mount package. The device supports a maximum collector-emitter voltage of 1.2 kV and offers a continuous collector current rating of 70 A. Key electrical parameters include a collector-emitter saturation voltage of 3.3 V at 25°C, with gate-emitter voltage limits defined between -20 V and +20 V. The component operates within a temperature range from -55°C to +150°C.
Feature Summary
- Single configuration IGBT structure for discrete switching applications
- Surface-mount compatible TO-268-3 package design
- High-voltage capability up to 1.2 kV collector-emitter breakdown
Applications
- Industrial motor drive systems
- Power supply inverters
- High-voltage switching circuits
Procurement Notes
Verify the Not Recommended for New Design (NRND) status before initiating any new procurement or integration projects. Confirm availability through authorized distributors as standard stock may be limited. Ensure that the specific ordering suffix matches the required package and compliance specifications for your assembly process.
Selection Notes
Select this component when a high-voltage single IGBT with surface-mount mounting is required. The 1.2 kV rating suits medium-to-high voltage DC link applications. Evaluate the 3.3 V saturation voltage against thermal management capabilities, as higher conduction losses may necessitate robust heatsinking solutions compared to lower Vsat alternatives.
Part Context
This part belongs to the IXGT35N120 series of silicon IGBTs produced by IXYS. It shares the same voltage and current ratings as other variants in the family but differs in packaging and specific electrical characteristics such as saturation voltage. The TO-268-3 form factor distinguishes it from through-hole options like the TO-247.
Replacement Considerations
Consider the IXGT30N120B3D1 for similar voltage ratings with different current handling. Verify compatibility with existing PCB footprints and thermal requirements when substituting components within the IXYS IGBT portfolio.
