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Product Detailed Parameters
- Description：IGBT NPT 2500V 13A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：2500 V
- Current - Collector (Ic) (Max)：13 A
- Current - Collector Pulsed (Icm)：46 A
- Vce(on) (Max) @ Vge, Ic：6V @ 15V, 4A
- Power - Max：150 W
- Switching Energy：360µJ (off)
- Input Type：Standard
- Gate Charge：57 nC
- Td (on/off) @ 25°C：-/350ns
- Test Condition：1250V, 4A, 20Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXGT4N250C is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 2500 V and a continuous collector current rating of 4 A at 25°C. The device utilizes NPT technology and is housed in a TO-268AA surface-mount package. Key electrical parameters include a maximum collector-emitter saturation voltage of 7.5 V at 4 A, a gate-emitter threshold voltage range of 3 V to 6 V, and a typical turn-on delay time of 190 ns. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- High-voltage capability with a 2500 V collector-emitter breakdown voltage for robust operation in demanding power environments.
- NPT (Non-Punch-Through) technology design ensuring stable switching characteristics and reliable performance under high-voltage stress.
- Surface-mount construction in a TO-268AA package designed for efficient thermal dissipation and automated assembly integration.
Applications
- High-voltage DC-DC converters
- Induction heating systems
- Uninterruptible Power Supplies (UPS)
- Motor drive circuits
Procurement Notes
Verify the specific datasheet version and manufacturer documentation before procurement, as specifications may vary between production batches or revisions. Confirm that the TO-268AA package dimensions align with your PCB footprint requirements. Ensure that the thermal management solution supports the device's power dissipation capabilities within the specified operating temperature range.
Selection Notes
Select this component when designing circuits requiring high blocking voltages up to 2500 V with moderate current handling around 4 A. Consider the 7.5 V saturation voltage for conduction loss calculations and the switching times for frequency selection. Evaluate the thermal resistance of the TO-268AA package against your heat sink design to maintain junction temperatures below the 150°C maximum limit during continuous operation.
Part Context
This IGBT belongs to the IXGT series from IXYS, which focuses on medium-power, high-voltage switching applications. The series typically offers a balance between voltage rating and current capacity, suitable for industrial power electronics. The TO-268AA package is common in this segment, providing a compact form factor for surface-mount implementations while maintaining adequate thermal performance for discrete transistor mounting.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative high-voltage IGBTs based on matching voltage ratings, current limits, and package dimensions through official manufacturer cross-reference tools.
