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The IXGT6N170A is a single NPT silicon IGBT manufactured by IXYS, designed for high-voltage switching applications. It features a D3PAK-3 (TO-268-3) surface-mount package with a maximum collector-emitter voltage of 1700 V and a continuous collector current of 6 A at 25°C. The device exhibits a collector-emitter saturation voltage of 7 V under standard test conditions. Key electrical parameters include a gate-emitter voltage range of -20 V to +20 V and a power dissipation rating of 75 W. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix against official documentation to confirm packaging variations, such as tube versus reel configurations. Ensure that any ordering suffixes do not alter the electrical characteristics or pinout unless explicitly stated in the manufacturer's datasheet. Cross-reference the part number with the latest revision history to confirm compliance with current environmental standards.
Select this component when a 1700 V rated IGBT is required in a surface-mount topology. The 6 A continuous current rating suits moderate power levels where board space is constrained. Compare the 7 V saturation voltage against alternative packages like TO-247 if higher current handling or lower conduction losses are necessary for the specific circuit design.
This part belongs to the IXYS BIMOSFET series of high-voltage IGBTs. It shares the 1700 V voltage class with other models in the lineup but differs in current capacity and package type. The D3PAK-3 package distinguishes it from through-hole variants, offering a compact solution for automated assembly processes in industrial electronics.
Direct substitutes may include other IXYS 1700 V IGBTs in similar packages, such as the IXGT6N170. Verify pin compatibility and thermal resistance values before substitution. Alternative manufacturers' parts require careful evaluation of Vce(sat), switching times, and gate charge specifications to ensure circuit compatibility.