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Product Detailed Parameters
- Description：IGBT PT 600V 75A TO-268
- Series：GenX3™
- Mfr：IXYS
- Package：Tape & Reel (TR)
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：400 A
- Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 60A
- Power - Max：540 W
- Switching Energy：1.38mJ (on), 3.5mJ (off)
- Input Type：Standard
- Gate Charge：230 nC
- Td (on/off) @ 25°C：31ns/320ns
- Test Condition：480V, 50A, 3Ohm, 15V
- Reverse Recovery Time (trr)：34 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268
- Grade：-
- Qualification：-
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Overview
The IXGT72N60A3-TRL is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the GenX3 series, manufactured by IXYS. It utilizes SMD/SMT mounting in a TO-268-3 package and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 400 A at 25°C. The device features a typical collector-emitter saturation voltage of 1.35 V and a power dissipation rating of 540 W. Maximum gate-emitter voltage limits are set at ±20 V, with a specified gate-emitter leakage current of 100 nA.
Feature Summary
- GenX3 trench technology for optimized switching performance
- Square Reverse Bias Safe Operating Area (RBSOA)
- Surface-mount compatible TO-268-3 package design
Applications
- High-frequency motor drives
- Switch-mode power supplies
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging configuration. The standard tube variant differs from the reel format indicated by the TRL suffix. Confirm RoHS compliance status through the latest datasheet before finalizing procurement specifications.
Selection Notes
Select this component when a high-current single IGBT in a surface-mount package is required. Ensure thermal management solutions accommodate the 540 W power dissipation rating. Verify that the 600 V blocking voltage aligns with the circuit's peak voltage requirements and operating conditions.
Part Context
This part belongs to the IXYS GenX3 family of IGBTs, which employs advanced trench gate technology. The family is characterized by low saturation voltages and robust safe operating area capabilities. The TO-268-3 package provides a compact solution for applications requiring high current density in surface-mount designs.
Replacement Considerations
The non-reel version of this component is available as IXGT72N60A3. Verify pinout compatibility and electrical parameter equivalence before substituting packages or exploring alternative manufacturers.
