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Product Detailed Parameters
- Description：IGBT PT 1200V 240A PLUS247
- Series：GenX3™
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：240 A
- Current - Collector Pulsed (Icm)：600 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 100A
- Power - Max：830 W
- Switching Energy：10mJ (on), 33mJ (off)
- Input Type：Standard
- Gate Charge：420 nC
- Td (on/off) @ 25°C：40ns/490ns
- Test Condition：960V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：PLUS247™-3
- Grade：-
- Qualification：-
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Overview
The IXGX120N120A3 is a silicon N-channel IGBT from the IXYS GenX3 series, housed in a TO-264-3 through-hole package. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 240 A at 25°C. The device has a typical collector-emitter saturation voltage of 2.2 V and supports a power dissipation of 830 W. Operating temperatures range from -55°C to +150°C, with a maximum junction temperature of 175°C. Gate-emitter voltage limits are ±20 V.
Feature Summary
- GenX3 technology for optimized switching performance
- High short-circuit capability
- Low saturation voltage for reduced conduction losses
Applications
- Induction heating systems
- Motor drives
- Switch-mode power supplies
- DC-DC converters
Procurement Notes
Verify the specific suffix 'A3' against the manufacturer's official datasheet to confirm pinout and electrical characteristics match your design requirements. Ensure thermal management solutions align with the 830 W power dissipation rating. Confirm RoHS compliance status via the latest component documentation before finalizing procurement.
Selection Notes
Select this component when high current handling and robust short-circuit withstand capability are required. Compare the 2.2 V saturation voltage against alternative devices to evaluate conduction loss efficiency. Verify that the TO-264-3 package dimensions fit the target PCB layout and heatsinking constraints.
Part Context
This part belongs to the IXYS GenX3 family of IGBTs, designed for high-power applications. The GenX3 technology utilizes advanced trench gate structures to improve switching speed and reduce losses compared to previous generations. It is distinct from lower-current variants within the same voltage rating family.
Replacement Considerations
Check for direct replacements like IXGK120N120A3 or IXGH120N120A3 if package or current ratings differ. Verify pin compatibility and thermal resistance values before substituting. Consult the manufacturer's cross-reference guide for confirmed equivalent parts.
