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The IXGX28N140B3H1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage (VCEO) of 1400 V and a continuous collector current (IC) of 28 A at 25°C case temperature. The device utilizes GenX3™ trench technology for optimized switching performance. It is housed in a TO-247-3 package designed for through-hole mounting. The component operates within a junction temperature range of -55°C to +150°C, with a maximum gate-emitter voltage rating of ±20 V.
Verify the specific suffix H1 against official IXYS documentation to confirm pinout and packaging details. Confirm RoHS compliance status directly from the manufacturer datasheet. Check for obsolescence notices as IXYS product lines undergo lifecycle changes. Ensure sourcing channels provide authentic components with traceable manufacturing dates.
Select this component when designing circuits requiring high-voltage isolation up to 1400 V. The 28 A current rating suits moderate-power applications where low conduction losses are critical. Evaluate thermal resistance parameters for heatsink design. Compare switching energy values against alternative devices if high-frequency operation is required.
This part belongs to the IXGX series of high-voltage IGBTs from IXYS. The series typically employs GenX3™ technology to balance conduction and switching losses. These devices are engineered for reliability in demanding power electronics environments, offering a standardized form factor for easy integration into existing module footprints.
Consult official cross-reference guides for direct replacements. Verify that any substitute matches the 1400 V rating, 28 A current capacity, and TO-247-3 package dimensions. Ensure electrical characteristics such as VCE(sat) and switching times fall within acceptable tolerances for the target application.