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The IXGX320N60A3 is a GenX3 A3-Class N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a PLUS247 package with a collector tab for screw mounting. The device supports a maximum collector-emitter voltage of 600V and a continuous collector current of 320A at 25°C, dropping to 210A at 110°C. The saturated collector-emitter voltage is typically 1.05V at 100A and 1.46V at 320A. Maximum power dissipation reaches 1000W at 25°C case temperature. Operating junction temperatures range from -55°C to +150°C.
Verify the specific suffix 'A3' against the manufacturer's latest documentation to confirm the exact generation and electrical characteristics. Ensure the PLUS247 package dimensions match the mechanical constraints of the target assembly. Confirm RoHS compliance status through official datasheets before finalizing procurement specifications.
Select this component for high-current applications requiring low on-state voltage drop. Evaluate the thermal resistance parameters against the expected heat sink capacity. Consider the gate charge requirements for driver selection. Verify that the switching frequency aligns with the device's turn-off time capabilities to manage total power losses effectively.
This part belongs to the IXYS GenX3 family of 600V IGBTs. It shares the same core die and electrical ratings as the IXGK320N60A3 but utilizes the PLUS247 surface-mount compatible package instead of the TO-264 leaded package. Both variants offer identical performance metrics for circuit design purposes.
The IXGK320N60A3 serves as a direct functional replacement with identical electrical characteristics, requiring only mechanical adaptation due to the different package type. Other GenX3 series devices may offer similar performance but require verification of pinout and thermal parameters.