IXGX60N60B2D1

Overview

The IXGX60N60B2D1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A at 25°C, with a pulsed current capacity of 150A. The device is housed in a PLUS247 package, providing a maximum power dissipation of 500W. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Optimized for hard switching applications operating between 10-25 kHz
• Features a square Reverse Bias Safe Operating Area (RBSOA)
• Utilizes MOS gate structure for simplified drive circuit requirements

Applications

• Industrial motor drives
• Power supply inverters
• High-frequency switching circuits

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the PLUS247 package dimensions match the target PCB footprint. Ensure thermal management solutions are adequate for the 500W power dissipation rating under actual operating conditions.

Selection Notes

Select this component when a 600V IGBT with high current handling capability is required for hard switching environments. The square RBSOA provides robust performance during short-circuit events. Consider the 75A continuous current limit and 500W thermal constraints relative to the system's duty cycle and cooling capabilities.

Part Context

This part belongs to the IXGX60N60 series of single IGBTs from IXYS. These devices are designed for medium-power applications requiring reliable switching performance. The PLUS247 package offers a balance of electrical isolation and thermal conductivity suitable for various industrial modules.

Replacement Considerations

No direct substitute part numbers are confirmed in public documentation.