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Product Detailed Parameters
- Description：IGBT PT 600V 35A TO-263AA
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：35 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 16A
- Power - Max：190 W
- Switching Energy：380µJ (off)
- Input Type：Standard
- Gate Charge：33 nC
- Td (on/off) @ 25°C：30ns/116ns
- Test Condition：480V, 16A, 10Ohm, 15V
- Reverse Recovery Time (trr)：30 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
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Overview
The IXSA20N60B2D1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 40 A at 25°C. The device utilizes the HiPerFAST technology for optimized switching performance. It is housed in a D2PAK-3 (TO-263-3) surface-mount package, designed for efficient thermal management with a maximum power dissipation of 150 W. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates HiPerFAST IGBT technology for high current handling and low saturation voltage.
- Features a built-in fast recovery anti-parallel diode for simplified circuit design.
- Utilizes a standard JEDEC TO-263-3 surface-mount package for space savings.
Applications
- AC motor speed control systems
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies
Procurement Notes
Verify the specific manufacturing lot date code against the required shelf life, as semiconductor components are sensitive to storage conditions. Confirm RoHS compliance status through the official datasheet or manufacturer declaration, as regulatory requirements may vary by production batch. Ensure the supplier provides traceability documentation matching the part number suffixes to guarantee authenticity and technical specification adherence.
Selection Notes
Select this component when a surface-mount IGBT with integrated freewheeling diode is required for medium-power applications. The TO-263-3 package offers a balance between thermal performance and PCB space efficiency compared to through-hole alternatives. Consider the 600V rating and 40A current capability relative to the system's peak load requirements and thermal constraints during steady-state operation.
Part Context
This device belongs to the IXYS HiPerFAST family of IGBTs, which are engineered for high-efficiency power switching. The series combines trench gate technology with field-stop structures to minimize switching losses. The inclusion of an integrated diode reduces component count in half-bridge configurations, enhancing reliability and reducing overall assembly complexity in industrial power electronics.
Replacement Considerations
Direct substitutes include the IXSA20N60B3D1 from the same manufacturer. Cross-brand replacements require verification of pin compatibility, voltage ratings, and thermal characteristics to ensure functional equivalence without redesigning the host circuit board.
FAQ
Does the IXSA20N60B2D1 include an integrated diode?
Yes, the device integrates a fast recovery anti-parallel diode within the same package.
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150°C.
Is this component suitable for surface mounting?
Yes, it is designed for surface mount installation using the standard TO-263-3 package.
