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Product Detailed Parameters
- Description：IGBT PT 1200V 30A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 15A
- Power - Max：150 W
- Switching Energy：1.5mJ (off)
- Input Type：Standard
- Gate Charge：57 nC
- Td (on/off) @ 25°C：30ns/148ns
- Test Condition：960V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXSH15N120B is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) from the S Series, manufactured by IXYS. It features an epitaxial silicon drift region designed for fast switching with small tail current and low switching losses. The device offers high blocking voltage capability and utilizes a MOS gate structure for drive simplicity. It is housed in a standard plastic package meeting UL 94 V-0 flammability classification.
Feature Summary
- Epitaxial silicon drift region technology enabling fast switching and reduced tail current
- High blocking voltage capability suitable for demanding power applications
- MOS gate structure providing simplified drive requirements
- Improved Short Circuit Safe Operating Area (SCSOA) performance
Applications
- AC motor speed control
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switched-mode and resonant-mode power supplies
- DC choppers
Procurement Notes
Verify component authenticity through authorized IXYS distributors or direct manufacturer channels. Confirm RoHS compliance status and specific packaging details against the official datasheet prior to procurement. Ensure storage conditions adhere to semiconductor handling standards to maintain device integrity.
Selection Notes
Select this IGBT for applications requiring high voltage isolation and efficient switching characteristics. The SCSOA improvement makes it suitable for robust industrial environments. Evaluate thermal management requirements based on the specific package type and expected operating temperatures within the defined application scope.
Part Context
This component belongs to the IXYS S Series of high-voltage IGBTs. The series is characterized by enhanced short-circuit safe operating area capabilities compared to previous generations. It represents a silicon-based power semiconductor solution designed for efficiency and reliability in medium-to-high power conversion systems.
Replacement Considerations
Cross-reference with IXSH15N120BD1 for variants with integrated diodes if circuit topology requires it. Verify pinout compatibility and electrical parameters such as Vceo and Ic when substituting with other high-voltage IGBTs from different manufacturers.
