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Product Detailed Parameters
- Description：IGBT PT 1200V 30A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 15A
- Power - Max：150 W
- Switching Energy：1.5mJ (off)
- Input Type：Standard
- Gate Charge：57 nC
- Td (on/off) @ 25°C：30ns/148ns
- Test Condition：960V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：30 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXSH15N120BD1 is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) from the S Series, manufactured by IXYS. It features an epitaxial silicon drift region designed for fast switching with small tail current and low switching losses. The device integrates a built-in diode and utilizes MOS gate turn-on for drive simplicity. It is housed in a flange mount package suitable for industrial power applications requiring high blocking voltage.
Feature Summary
- High blocking voltage capability
- Epitaxial silicon drift region for fast switching and low losses
- MOS gate structure for simplified drive requirements
- Improved Short Circuit Safe Operating Area (SCSOA)
Applications
- AC motor speed control
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switched-mode and resonant-mode power supplies
- DC choppers
Procurement Notes
Verify component authenticity through authorized IXYS distributors or direct manufacturer channels. Confirm datasheet revision and packaging specifications prior to procurement. Ensure supply chain integrity to avoid counterfeit components. Check for RoHS compliance status if required by specific project regulations.
Selection Notes
Select this IGBT for applications requiring high voltage isolation and efficient switching performance. The integrated diode simplifies circuit design for half-bridge configurations. Consider thermal management requirements due to the flange mount package style. Evaluate drive circuit compatibility with the MOS gate input characteristics.
Part Context
This component belongs to the IXYS S Series of high-voltage IGBTs. The series is characterized by improved Short Circuit Safe Operating Area capabilities. It represents a specialized solution for power conversion systems where reliability and switching efficiency are critical parameters for system performance.
Replacement Considerations
Cross-reference with IXSH15N120B for functional equivalence within the same series. Verify pinout compatibility and thermal resistance values when substituting. Ensure that any alternative component meets the same voltage and current ratings for safe operation.
