SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXSH24N60A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the HiPerFAST series, manufactured by IXYS. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 48 A at 25°C. The device exhibits a maximum saturated collector-emitter voltage of 2.7 V when tested at 15 V gate drive and 24 A collector current. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation rating of 150 W. The component utilizes a TO-247AD through-hole package with an isolated mounting hole.
Verify the specific suffix designation carefully during procurement. Datasheets indicate that the base part number may have variants such as AU1 which includes an integrated diode, whereas standard listings may refer to the discrete IGBT. Confirm the exact electrical configuration matches the design requirements before ordering to avoid functional mismatches due to suffix differences.
Select this component for applications requiring robust switching performance in the 600V class. Ensure the thermal management system can handle the 150 W power dissipation limit. Verify that the gate drive voltage supports the specified 15 V test conditions for optimal saturation voltage performance. Check if the integrated diode variant is required for the specific topology.
This device belongs to the IXYS HiPerFAST family, designed for high-efficiency power conversion. It is housed in the JEDEC-standard TO-247AD package, which facilitates easy screw mounting and surface mounting compatibility. The product line targets industrial and consumer electronics markets requiring reliable power semiconductor solutions.
Direct substitutes include the IXXH30N60B3D1. Alternative similar devices from other manufacturers include the STGW20V60DF and STGW40H60DLFB from STMicroelectronics.