SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXSH24N60B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 48 A at 25°C. The device has a maximum power dissipation of 150 W and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate charge of 41 nC, a turn-on delay time of 50 ns, and a turn-off delay time of 150 ns. The saturation voltage is 2.5 V at 15 V gate drive and 24 A collector current. The reverse recovery time is 25 ns, and the switching energy is 1.3 mJ under specified test conditions.
Verify component authenticity through authorized distributors or direct manufacturer channels due to potential availability of refurbished or counterfeit units. Confirm that the specific part number matches the required electrical specifications and package type before integration into production designs. Check for any recent product change notifications regarding material composition or manufacturing site updates.
Select this component for applications requiring a 600V blocking capability with moderate current handling up to 48A. Consider the 150W power dissipation limit and ensure adequate heatsinking is provided to maintain junction temperatures within the specified operating range. Evaluate the gate charge and switching times against the target switching frequency requirements to manage total system losses effectively.
This IGBT belongs to the IXYS SH series, designed for medium-speed switching applications. It utilizes standard trench gate technology to balance conduction and switching losses. The TO-247AD package provides a reliable mechanical interface for high-power modules and discrete implementations in industrial electronics.
IXXH30N60B3D1 is listed as a direct replacement. Verify pinout compatibility and electrical parameter alignment before substitution.