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Product Detailed Parameters
- Description：IGBT 1200V 50A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 25A
- Power - Max：200 W
- Switching Energy：9.6mJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：100ns/450ns
- Test Condition：960V, 25A, 18Ohm, 15V
- Reverse Recovery Time (trr)：60 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXSH25N120AU1 is a silicon IGBT from the IXYS manufacturer, housed in a TO-247AD-3 through-hole package. It features a single configuration with a collector-emitter maximum voltage of 1200V and a continuous collector current of 50A. The device supports a junction temperature range from -55°C to +150°C. Key electrical parameters include a gate-emitter voltage limit of ±20V, a saturation voltage of 4V at 25A, and a gate charge of 120nC. Switching characteristics include a turn-on delay of 100ns and a turn-off delay of 450ns under specified test conditions.
Feature Summary
- Utilizes standard input type for gate drive compatibility
- Designed for high-voltage switching applications up to 1200V
- Provides robust thermal performance within extended temperature ranges
Applications
- Industrial motor drives
- Power supply units
- Inverter circuits
Procurement Notes
Verify component authenticity due to obsolete status. Confirm datasheet revisions match design requirements. Check RoHS compliance details as indicated in official documentation. Ensure sourcing channels provide valid traceability records for quality assurance purposes prior to integration into production systems.
Selection Notes
Consider the specific switching energy values and thermal resistance when designing heat sinks. Evaluate gate drive requirements against the 120nC gate charge specification. Compare alternative packages if board space constraints differ from the TO-247AD-3 footprint. Review short-circuit withstand capabilities if applicable to the target circuit topology.
Part Context
This component belongs to the IXYS discrete semiconductor portfolio, specifically categorized under Insulated Gate Bipolar Transistors. It represents a legacy product line often superseded by newer generations such as the IXSH series variants or GenX3 technologies. Designers should assess end-of-life implications when selecting this part for new equipment manufacturing.
Replacement Considerations
Official substitutes may include other IXYS IGBTs in similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution. Consult current IXYS catalogs for updated alternatives replacing obsolete parts.
