IXSH35N100A

Description：IGBT 1000V 70A TO-247AD
Series：-

SKU:a95b3f122899 Category: Single IGBTs Brand: IXYS

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT 1000V 70A TO-247AD
Series：-
Mfr：IXYS
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1000 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：140 A
Vce(on) (Max) @ Vge, Ic：3.5V @ 15V, 35A
Power - Max：300 W
Switching Energy：10mJ (off)
Input Type：Standard
Gate Charge：180 nC
Td (on/off) @ 25°C：80ns/400ns
Test Condition：800V, 35A, 2.7Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

Download product information

IXSH35N100A

Overview

The IXSH35N100A is a single N-channel IGBT from IXYS, designed for high-power switching applications. It features a 1000V collector-emitter breakdown voltage and a continuous collector current of 70A at 25°C. The device operates within a junction temperature range of -55°C to 150°C and is housed in a TO-247AD through-hole package. Key electrical parameters include a maximum Vce(sat) of 3.5V at 15V gate drive and 35A collector current, a pulsed collector current of 140A, and a total power dissipation of 300W. Gate charge is specified at 180nC.

Feature Summary

Utilizes 5th generation Trench IGBT technology for improved performance.
Features square Reverse Bias Safe Operating Areas (RBSOA) for robust operation.
Designed with low gate charge characteristics to facilitate efficient driving.

Applications

Electric vehicle motor drive systems
Hybrid electric vehicle powertrains
High-efficiency industrial power supplies

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation when sourcing this component. Confirm that the TO-247AD package dimensions match your thermal management design requirements. Ensure that the operating conditions remain within the specified 1000V voltage and 70A current limits to maintain device reliability and safety margins during procurement validation.

Selection Notes

Select the IXSH35N100A for applications requiring high blocking voltage and significant current handling capabilities. Its 5th generation technology offers advantages in switching efficiency compared to older generations. Consider the thermal resistance of the TO-247AD package and ensure adequate heatsinking to manage the 300W power dissipation under continuous load conditions while maintaining junction temperatures below 150°C.

Part Context

This component belongs to IXYS's portfolio of discrete power semiconductors, specifically their HiPerFET and Trench IGBT families. These devices are engineered to provide high efficiency and reliability in demanding power conversion environments. The IXSH35N100A represents a standard single-chip solution suitable for bridge configurations or standalone switching roles in medium to high-power electronic systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. When evaluating alternatives, prioritize devices with matching 1000V ratings, comparable TO-247AD footprints, and similar Vce(sat) specifications to ensure functional compatibility without redesigning the PCB layout or thermal interface.