IXSH35N120B

Description：IGBT PT 1200V 70A TO-247AD
Series：-

SKU:5053e9afa651 Category: Single IGBTs Brand: IXYS

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT PT 1200V 70A TO-247AD
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：140 A
Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 35A
Power - Max：300 W
Switching Energy：5mJ (off)
Input Type：Standard
Gate Charge：120 nC
Td (on/off) @ 25°C：36ns/160ns
Test Condition：960V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

Download product information

IXSH35N120B

Overview

The IXSH35N120B is a third-generation silicon carbide (SiC) MOSFET manufactured by IXYS. It features a 1200V drain-source breakdown voltage and a continuous drain current of 70A at 25°C, housed in a TO-247 package. The device exhibits a low on-resistance of 35mΩ, enabling efficient power conversion with reduced conduction losses. Designed for high-frequency switching applications, it supports a maximum junction temperature of 175°C and includes a Kelvin source connection to minimize parasitic inductance effects during operation.

Feature Summary

Utilizes third-generation SiC technology for superior thermal performance and efficiency
Features a Kelvin source contact to enhance gate drive control and reduce switching losses
Provides robust blocking voltage capability combined with low on-state resistance

Applications

Electric vehicle charging infrastructure
Motor drives and industrial motor control
DC/DC converters and power supplies
Solar inverters and renewable energy systems

Procurement Notes

Verify the specific suffix and marking code against official datasheets to confirm authenticity. Ensure compatibility with recommended gate driver voltages and thermal management requirements. Check for RoHS compliance status and verify that the component meets all specified electrical parameters for your application design.

Selection Notes

Select this component for designs requiring high efficiency and fast switching speeds. Consider the thermal characteristics and ensure adequate heat sinking for the TO-247 package. Evaluate system voltage levels to match the 1200V rating and confirm current demands align with the 70A continuous specification.

Part Context

This part belongs to IXYS's portfolio of wide-bandgap semiconductor devices. It represents an advancement over traditional silicon MOSFETs, offering better performance in high-voltage and high-temperature environments. The series is designed to meet the rigorous demands of modern power electronics applications.