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Product Detailed Parameters
- Description：IGBT PT 600V 75A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 40A
- Power - Max：280 W
- Switching Energy：1.8mJ (off)
- Input Type：Standard
- Gate Charge：190 nC
- Td (on/off) @ 25°C：50ns/110ns
- Test Condition：480V, 40A, 2.7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXSH40N60B is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 75 A at 25°C. The device utilizes HiPerFAST technology and is housed in a TO-247AD package for through-hole mounting. Key electrical characteristics include a maximum saturated collector-emitter voltage of 2.5 V at 40 A, a gate charge of 116 nC, and a switching energy of 850 µJ during turn-off.
Feature Summary
- HiPerFAST IGBT technology optimized for low conduction losses
- Guaranteed short-circuit safe operating area capability
- Standard international TO-247AD package design
Applications
- AC motor speed control systems
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switch-mode power supplies
Procurement Notes
Verify the specific suffix and manufacturing date code against the latest IXYS datasheet to ensure compatibility with current production standards. Confirm that the TO-247AD pinout matches the target PCB footprint. Check for any recent product change notices regarding material composition or testing conditions before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring robust short-circuit withstand capability and efficient switching performance. Ensure the thermal management solution supports the specified power dissipation limits within the operating temperature range. Verify that the gate drive circuitry aligns with the standard input requirements and gate charge specifications for optimal switching times.
Part Context
This part belongs to the IXYS HiPerFAST family of discrete IGBTs. These devices are engineered for medium to high-power switching applications. The series emphasizes reliability and efficiency through advanced semiconductor processing techniques, providing a balance between low on-state voltage and fast switching speeds suitable for industrial power electronics.
Replacement Considerations
Direct substitutes may include the IXGH40N60C. Other compatible alternatives from different manufacturers include FGH40N60SMD-F085 and STGW40H65FB. Verify pin compatibility and electrical parameters before substitution.
