IXSH45N120

Description：IGBT 1200V 75A TO-247AD
Series：-

SKU:0249b05e0c6c Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 75A TO-247AD
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：180 A
Vce(on) (Max) @ Vge, Ic：3V @ 15V, 45A
Power - Max：300 W
Switching Energy：21mJ (off)
Input Type：Standard
Gate Charge：150 nC
Td (on/off) @ 25°C：80ns/400ns
Test Condition：960V, 45A, 2.7Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IXSH45N120

Overview

The IXYS IXSH45N120 is a third-generation silicon carbide (SiC) MOSFET designed for high-efficiency power conversion. It features a 1200V drain-source voltage rating and a continuous drain current of 45A. The device incorporates an ultra-fast intrinsic body diode and low capacitance characteristics to minimize switching losses. A Kelvin source connection is included to improve gate-drive control and reduce parasitic inductance effects during operation.

Feature Summary

Third-generation SiC technology with low on-state resistance
Ultra-fast intrinsic body diode for superior switching performance
Kelvin source contact to minimize switching losses

Applications

EV charging infrastructure
Motor drives
DC/DC converters
Solar inverters

Procurement Notes

Verify the specific manufacturer datasheet for the IXSH45N120 to confirm current availability status, as supply chain conditions change. Ensure that the procurement channel provides original manufacturer documentation to validate authenticity. Check for any specific handling requirements related to electrostatic discharge protection during storage and installation.

Selection Notes

Select this component when designing systems requiring high-frequency switching with minimal conduction losses. The 1200V rating suits medium-voltage applications. Consider the thermal management capabilities required for the TO-247-4L package. Verify that the gate drive circuitry supports the recommended voltage levels for optimal performance.

Part Context

This part belongs to the IXYS HyperFET or similar high-performance SiC series. It represents an advancement over previous generations by offering improved efficiency and faster switching speeds. The component is engineered for demanding industrial and automotive environments where reliability and thermal stability are critical.

Replacement Considerations

Check for direct pin-compatible substitutes within the same manufacturer's portfolio. Evaluate alternative SiC MOSFETs with similar voltage and current ratings if this specific model is discontinued. Ensure thermal and electrical parameters match the original design requirements.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.