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The IXYS IXSK35N120BD1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) with an integrated fast-recovery diode. It features a 1200V collector-emitter voltage rating and supports continuous collector currents up to 35A at 25°C. The device utilizes N-channel technology within a TO-247 package, offering short-circuit safe operating area capability. Key electrical characteristics include a maximum saturation voltage of 2.6V and typical turn-off times around 125ns, designed for efficient power switching in demanding industrial environments.
Verify the specific datasheet revision and manufacturer documentation to confirm exact electrical parameters such as Vce(sat) and switching times under your operating conditions. Ensure the component matches the required package style and thermal resistance specifications for your design. Cross-reference official Littelfuse/IXYS resources for updated compliance and availability status before finalizing procurement decisions.
Select this IGBT for applications requiring high voltage isolation and integrated freewheeling diode functionality. Consider the thermal performance and short-circuit tolerance when designing for motor drives or UPS systems. Evaluate the switching speed and saturation voltage against system efficiency requirements. Ensure gate drive circuits are compatible with the device's input capacitance and threshold characteristics.
This component belongs to the IXYS high-voltage IGBT family, which includes similar devices like the IXSK35N120AU1 and IXSX35N120AU1. These parts are engineered for industrial power electronics, providing reliable performance in AC motor control and DC chopper applications. The series emphasizes robustness through short-circuit capability and optimized switching characteristics for modern power conversion topologies.
Potential substitutes include the IXSK35N120AU1 and IXSX35N120AU1 from the same manufacturer. Verify pin compatibility and electrical parameter alignment before substitution. Ensure the alternative part meets the same voltage, current, and thermal requirements for the specific application context.